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| 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N4240 APPLICATIONS: * * * Off-Line Inverters Switching Regulators Motor Controls * * * Deflection Circuits DC-DC Converters High Voltage Amplifiers FEATURES: * * * High Voltage: 250 to 500V Fast Switching: tf < 3 sec. High Power: 35 Watts * * High Current: 2 Amps Low VCE (SAT) 5 Amp, 500V, High Voltage NPN Silicon Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-66 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCBO* VCEO* VCER* VEBO* IC* IC* IB* TSTG* TJ* * PT* * CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage RBE = 50 Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from Case for 10 Sec. Power Dissipation TC = 25 C Thermal Impedance VALUE 500 300 400 6 5 2 1 -65 to 200 -65 to 200 235 35 5.0 UNITS Volts Volts Volts Volts Amps Amps Amps C C C Watts C/W JC Indicates JEDEC registered data. MSC1058.PDF 05-19-99 2N4240 ELECTRICAL CHARACTERISTICS: (25 Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)* VCER(sus) ICEV* ICEV* ICEO* IEB0* hFE* CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current TC = 150 C Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio (Note 1) Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Second-Breakdown Collector Current (with base forward biased) Second-Breakdown Energy (with base reverse biased) Common-Emitter SmallSignal Forward Current Transfer Ratio Common-Emitter SmallSignal Forward Current Transfer Ratio, f = 5 MHz Collector-Base Capacitance Rise Time Storage Time Fall Time TEST CONDITIONS IC = 0.2 Amp (Notes e and 2) IC = 0.2A, RBE = 50 (Notes 1 and 2) VCE = 450V, VBE = -1.5V VCE = 300V, VBE = -1.5V VCE = 150V, IB = 0 VEB = 6V, IC = 0 IC = 0.1A, VCE = 10V IC = 0.75A, VCE = 10V IC = 0.75A, VCE = 2V IC = 0.75A, IB = .075A IC = 0.75A, IB = .075A VCE = 100V, t = 1.0sec. VEB = 4V, RBE = 20 , L = 100h VCE = 10V, IC = 0.2A, f = 5 MHz VCE = 10V, IC = 0.2A VCB = 10V, IE = 0, f = 1.0MHz IC = .75A, IB2 = .075A IC = .75A, IB1 = IB2 = .075A IC = .75A, IB1 = IB2 = .075A VALUE Min. Max. 300 ---400 ------------40 30 10 ------2.0 5.0 5.0 0.5 ---150 100 1.0 Units Volts Volts mA. mA. mA. mA. ---------Volts VCE(sat)* VBE(sat)* IS/b ES/b hfe* I hfe I* COb tr* ts* tf* ---0.35 1.8 ---- Volts A 50 ---- J 3 ---- ---- 3.0 ---- ---- ------------- 120 .05 6.0 3.0 pf sec. sec. sec. Note 1: Pulse Test: Pulse width = 300Sec., Rep. Rate 60Hz. Note 2: Caution - Do not use Curve Tracer. * Indicates JEDEC registered data. MSC1058.PDF 05-19-99 2N4240 PACKAGE MECHANICAL DATA: R.145 [3.68] MAX .050 [1.27] .075 [1.91] .470 [11.94] .500 [12.70] .360 [9.14] MIN SEATING PLANE .095 [2.41] .105 [2.67] .620 [15.75] MAX .958 [24.33] .962 [24.43] 2 1 .050 [1.27] MAX .250 [6.35] .340 [8.64] R.350 [8.89] MAX NOTE: DIMENSIONS IN [ ] = MILLIMETERS .570 [14.48] .590 [14.99] .190 [4.83] .210 [5.33] .028 [0.71] .034 [0.86] .142 [3.61] .152 [3.86] MSC1058.PDF 05-19-99 |
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